dmg1029sv document number: ds35421 rev. 3 - 2 1 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product sot563 complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 60v 1.7 ? @ v gs = 10v 500ma 3 ? @ v gs = 4.5v 400ma q2 -60v 4 ? @ v gs = -10v -360ma 6 ? @ v gs = -4.5v -310ma description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features and benefits ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? ultra-small surface mount package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot563 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.027 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging dmg1029sv-7 standard sot563 3000/tape & reel dmg1029svq-7 automotive sot563 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. 5. automotive products are aec-q101 qualified and are ppap capabl e. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www .diodes.com/quality/product_grade_definitions/. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view ga1 ym ga1 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) s 2 d 2 q 1 q 2 d 1 s 1 g 2 g 1 e3
dmg1029sv document number: ds35421 rev. 3 - 2 2 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product maximum ratings n-channel ? q1 (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 7) v gs = 10v steady state t a = +25c t a = +70c i d 500 400 ma t<10s t a = +25c t a = +70c i d 620 480 ma pulsed drain current (note 7) i dm 1000 ma maximum ratings p-channel ? q2 (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -60 v gate-source voltage v gss 20 v continuous drain current (note 7) v gs = -10v steady state t a = +25c t a = +70c i d -360 -280 ma t<10s t a = +25c t a = +70c i d -410 -320 ma pulsed drain current (note 7) i dm -650 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 0.45 w t a = +70c 0.28 thermal resistance, junction to ambient (note 6) steady state r ? ja 281 c/w t<10s 210 total power dissipation (note 7) t a = +25c p d 1 w t a = +70c 0.62 thermal resistance, junction to ambient (note 7) steady state r ? ja 129 c/w t<10s 97 operating and storage temperature range t j, t stg -55 to +150 c notes: 6. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate.
dmg1029sv document number: ds35421 rev. 3 - 2 3 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product electrical characteristics n-channel ? q1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 60 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @t c = +25c i dss ? ? 10 na v ds =50v, v gs = 0v gate-source leakage i gss ? ? 50 na v gs = 5v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) 1.0 ? 2.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? 1.3 1.7 ? v gs = 10v, i d = 500ma ? 1.5 3 v gs = 4.5v, i d = 200ma forward transfer admittance |y fs | 80 ? ? ms v ds = 10v, i d = 200ma diode forward voltage v sd ? ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics (note 9) input capacitance c iss ? 30 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 4.2 ? pf reverse transfer capacitance c rss ? 2.9 ? pf total gate charge q g ? 0.3 ? nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q gs ? 0.2 ? nc gate-drain charge q gd ? 0.08 ? nc turn-on delay time t d(on) ? 3.9 ? ns v dd = 30v, v gs = 10v, r g = 25 ? , i d = 200ma turn-on rise time t r ? 3.4 ? ns turn-off delay time t d(off) ? 15.7 ? ns turn-off fall time t f ? 9.9 ? ns electrical characteristics p-channel ? q2 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -60 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current @t c = +25c i dss ? ? -25 na v ds = -50v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 5v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) -1 ? -3.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 2.7 4 ? v gs = -10v, i d = -500ma ? 3.2 6 v gs = -4.5v, i d = -200ma forward transfer admittance |y fs | 50 ? ? ms v ds = -25v, i d = -100ma diode forward voltage v sd ? ? -1.4 v v gs = 0v, i s = -115ma dynamic characteristics (note 9) input capacitance c iss ? 25 ? pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 4.7 ? pf reverse transfer capacitance c rss ? 2.7 ? pf total gate charge q g ? 0.28 ? nc v gs = -4.5v, v ds = -10v, i d = -500ma gate-source charge q gs ? 0.14 ? nc gate-drain charge q gd ? 0.08 ? nc turn-on delay time t d(on) ? 5.5 ? ns v dd = -30v, v gs = -10v, r g = 50 ? , i d = -270ma turn-on rise time t r ? 7.9 ? ns turn-off delay time t d(off) ? 10.6 ? ns turn-off fall time t f ? 11.6 ? ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing.
dmg1029sv document number: ds35421 rev. 3 - 2 4 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product n-channel ? q1 v , drain -source voltage(v) fig. 1 typical output characteristics ds i, d r ain c u r r en t (a) d 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v , gate-source voltage (v) gs fig. 2 typical transfer characteristics 01 23 45 1.0 0 i, d r ain c u r r en t (a) d t = -55c a ? t = 25c a ? t = 85c a ? t = 125c a ? t = 150c a ? i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) ? 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) ? 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 v = 5.0v gs t = -55c a ? t = 25c a ? t = 85c a ? t = 125c a ? t = 150c a ? -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , drain-source on-resistance ( ) ds(on) ? 0.5 1.5 2.5 1.0 2.0 3.0 0 v , gate-source voltage (v) gs fig. 6 static drain-source on-resistance vs. gate-source voltage r , drain-source on-resistance ( ) ds(on) ? 0 1 2 3 4 5 6 7 04 8121620 i =150ma d i =300ma d
dmg1029sv document number: ds35421 rev. 3 - 2 5 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 7 diode forward voltage vs. current 1.0 0 i, s o u r c e c u r r en t (a) s t= 25c a t = -55c a t= 85c a t = 125c a t = 150c a v , drain-source voltage (v) fig. 8 typical junction capacitance ds c , j u n c t i o n c a p a c i t an c e (p f ) t f = 1mhz 0 10 20 30 40 50 0 5 10 15 20 c iss c oss c rss
dmg1029sv document number: ds35421 rev. 3 - 2 6 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product p-channel ? q2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 01 23 45 -v , drain -source voltage (v) fig. 9 typical output characteristics ds -i , d r ain c u r r en t (a) d v= -2.0v gs v= -2.5v gs v= -3.0v gs v= -4.0v gs v= -4.5v gs v= -10v gs 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 012345 0 -v , gate-source voltage (v) gs fig. 10 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150c a ? t = 125c a ? t = 85c a ? t = 25c a ? t = -55c a ? v = -5.0v ds 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -i , drain source current (a) fig. 11 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? v = -4.5v gs v = -10v gs v = -2.5v gs 0 1 2 3 4 5 6 7 8 0 2 4 6 8 101214161820 v , gate-source voltage (v) gs fig. 12 typical drain-source on-resistance vs. gate-source voltage r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? i = 100ma d 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -i , drain source current (a) fig. 13 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? t = -55c a ? t = 25c a ? t = 85c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 1.0 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 14 on-resistance variation with temperature r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v = -10v i = -500ma gs d v = -5.0v i = -500ma gs d
dmg1029sv document number: ds35421 rev. 3 - 2 7 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 15 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v=5v i= a gs d - -500m v= -10v i= a gs d -500m 0.8 1.2 1.4 1.6 1.8 1.0 2.0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 16 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) -i = 1ma d -i = 250a d 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.3 0.6 0.9 1.2 1.5 0 -i , s o u r c e c u r r e n t (a) s -v , source-drain voltage (v) fig. 17 diode forward voltage vs. current sd t= 25c a ? t= -55c a ? t= 85c a ? t= 125c a ? t= 150c a ? 1 10 100 0 5 10 15 20 25 30 35 40 c , j u n c t i o n c a p a c i t a n c e (p f ) t -v , drain-source voltage (v) fig. 18 typical junction capacitance ds c oss c rss f = 1mhz c iss 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs q , total gate charge (nc) fig. 19 gate-charge characteristics g v = -10v i = -500ma ds d
dmg1029sv document number: ds35421 rev. 3 - 2 8 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com /datasheets/ap02001.pdf for latest version. sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 x z y c1 c2 c2 g a m l b c h k g d
dmg1029sv document number: ds35421 rev. 3 - 2 9 of 9 www.diodes.com august 2013 ? diodes incorporated dmg1029sv new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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